any changing of specification will not be informed individual h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e ma ximum r a t ing s r ating s ymbol v alue unit drain?source v oltage v dss 60 vdc drain?gate v oltage (r gs = 1.0 m w ) v dgr 60 vdc gate?source v oltage ? continuous v gs ? + 1 5 0 5 5 ~ 2 0 vdc t he r ma l c ha r a c t e r is t ic s c harac teris tic s ymbol max unit t otal device dissipation fr?5 board (note 3.) t a = 25 c derate above 25 c p d 150 1.8 mw mw/ c thermal resistance, junction to ambient r j a q 625 c/w junction and storage t emperature t j , t stg c 1 . t h e power dissipation of the package may result in a lower continuous drain current. 2. pulse t est: pulse width 300 s, duty cycle 2.0%. 3. fr?5 = 1.0 x 0.75 x 0.062 in. 4. alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. s 1 d 1 d 2 s 2 g 1 g 2 ma r k ing dia g r a m k72 0 1 - j a n - 2 0 0 6 r e v . b p a g e 1 o f 3 small signal mosfet 115 mamps, 60volts, r ds(on) =7.5 2N7002DW
n?channel sot?363 s o t - 3 6 3 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) . 0 1 4 ( 0 . 3 5 ) . 0 0 6 ( 0 . 1 5 ) . 0 8 7 ( 2 . 2 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 5 5 ( 1 . 4 0 ) . 0 4 7 ( 1 . 2 0 ) . 0 2 6 t y p ( 0 . 6 5 t y p ) . 0 9 6 ( 2 . 4 5 ) . 0 8 5 ( 2 . 1 5 ) . 0 2 1 r e f ( 0 . 5 2 5 ) r e f . 0 1 8 ( 0 . 4 6 ) . 0 1 0 ( 0 . 2 6 ) . 0 0 6 ( 0 . 1 5 ) . 0 0 3 ( 0 . 0 8 ) . 0 5 3 ( 1 . 3 5 ) . 0 4 5 ( 1 . 1 5 ) . 0 4 3 ( 1 . 1 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 3 9 ( 1 . 0 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 0 4 ( 0 . 1 0 ) . 0 0 0 ( 0 . 0 0 ) 8 o o 0 rohs compliant product Q Q
any changing of specification will not be informed individual http://www.secosgmbh.com elektronische bauelemente small signal mosfet 115 mamps, 60volts, rds(on)=7.5 2N7002DW electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d = 10 adc) v (br)dss 60 ? ? vdc zero gate voltage drain current t j = 25 c (v gs = 0, v ds = 60 vdc) t j = 125 c i dss ? ? ? ? 1.0 500 adc gate?body leakage current, forward (v gs = 20 vdc) i gssf ? ? 10 nadc gate?body leakage current, reverse (v gs = ? 20 vdc) i gssr ? ? ?10 nadc on characteristics (note 2.) gate threshold voltage (v ds = v gs , i d = 250 adc) v gs(th) 1.0 ? 2.0 vdc on?state drain current (v ds 2.0 v ds(on) , v gs = 10 vdc) i d(on) 0.5 1 ? a static drain?source on?state resistance (v gs = 10 v, id = 500 madc) tc = 25c (v gs = 5.0 vdc, id = 50 madc) tc = 25c r ds(on) ? ? ? ? 13.5 7.5 ohms forward transconductance (v ds = 10 v, i d = 200 madc) g fs 80 ? ? ms dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c iss ? ? 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c oss ? ? 25 pf reverse transfer capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c rss ? ? 5.0 pf switching characteristics (note 2.) turn?on delay time (v dd = 30 vdc, i d 200 madc, t d(on) ? ? 20 ns turn?off delay time (v dd 25 vdc , i d 500 madc , r g = 25 ?, r l = 150 ?, v gen = 10 v) t d(off) ? ? 20 ns 01 -jan-2006 rev. b page 2 of 3
any changing of specification will not be informed individual http://www.secosgmbh.com elektronische bauelemente small signal mosfet 115 mamps, 60volts, r ds(on) =7.5 2N7002DW typical electrical characteristics 0 0.2 0.4 0.6 0.8 1 . 0 01 2 3 4 5 v = 10v gs 9.0v 8.0v 7.0v 6.5v 6.0v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.0/1.0v 5.5v 5.0v v , drain-source voltage (v) ds fi g . 1 on-re g ion characteristics i , drain-source current (a) d 0 1 2 3 4 5 00.2 r,n o rmalized ds(on) drain-source on-resistance i , drain current (a) d fig. 2 on-resistance vs drain current v=5.0v gs t=25 c j v = 10v gs 6 7 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 -55 -30 -5 20 45 70 95 120 145 r,n o rmalized ds(on) drain-source on-resistance t , junction temperature ( c) j fig. 3 on-resistance vs junction temperature v gs = 10v, i = d 0.5a v = 5.0v, i = 0.05a gs d 0 v , gate to source voltage (v) gs fig. 4 on-resistance vs. gate-source voltage i = 50ma d 1 2 3 4 5 6 0 2 4 6 8 1012141618 r,n o rmalized ds(on) drain-source on-resistance i = 500ma d 01 -j a n-200 6 rev. b page 3 of 3
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